31 May 2012 InAs/InAsSb Type-II superlattice: a promising material for mid-wavelength and long-wavelength infrared applications
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Abstract
Optical and structural properties of InAs/InAsSb type-II superlattices (T2SL) and their feasibility for mid- and longwavelength infrared (MWIR and LWIR) photodetector applications are investigated. The InAs/InAsSb T2SL structures with a broad bandgap range covering 4 μm to 12 μm are grown by molecular beam epitaxy and characterized by highresolution x-ray diffraction and photoluminescence (PL) spectroscopy. All of the samples have excellent structural properties and strong PL signal intensities of the same order of magnitude, indicating that non-radiative recombination is not dominant and the material system is promising for high performance MWIR and LWIR detectors and multiband FPAs.
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Oray O. Cellek, Oray O. Cellek, Hua Li, Hua Li, Xiao-Meng Shen, Xiao-Meng Shen, Zhiyuan Lin, Zhiyuan Lin, Elizabeth H. Steenbergen, Elizabeth H. Steenbergen, Ding Ding, Ding Ding, Shi Liu, Shi Liu, Qiang Zhang, Qiang Zhang, Ha Sul Kim, Ha Sul Kim, Jin Fan, Jin Fan, Michael J. DiNezza, Michael J. DiNezza, W. Hank G. Dettlaff, W. Hank G. Dettlaff, Preston T. Webster, Preston T. Webster, Zhaoyu He, Zhaoyu He, Jing-Jing Li, Jing-Jing Li, Shane R. Johnson, Shane R. Johnson, David J. Smith, David J. Smith, Yong-Hang Zhang, Yong-Hang Zhang, } "InAs/InAsSb Type-II superlattice: a promising material for mid-wavelength and long-wavelength infrared applications", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83533F (31 May 2012); doi: 10.1117/12.925076; https://doi.org/10.1117/12.925076
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