IR CMOS: ultrafast laser-enhanced silicon imaging

M. U. Pralle; J. E. Carey; H. Homayoon; J. Sickler; X. Li; J. Jiang; C. Hong; F. Sahebi; C. Palsule; J. McKee

doi:10.1117/12.919530

31 May 2012 IR CMOS: ultrafast laser-enhanced silicon imaging

M. U. Pralle, J. E. Carey, H. Homayoon, J. Sickler, X. Li, J. Jiang, C. Hong, F. Sahebi, C. Palsule, J. McKee

Proceedings Volume 8353, Infrared Technology and Applications XXXVIII; 83533H (2012) https://doi.org/10.1117/12.919530
Event: SPIE Defense, Security, and Sensing, 2012, Baltimore, Maryland, United States

Abstract

SiOnyx has developed a CMOS image sensor with enhanced infrared sensitivity. The technology deployed in this remarkable device is based on SiOnyx's proprietary ultrafast laser semiconductor process. We have established a high volume manufacturing process while maintaining complete compatibility with standard CMOS image sensor process flows. The enhanced performance proves the viability of a highly scalable low cost digital infrared sensor. The spectral sensitivity is from 400 to 1200 nm with measured quantum efficiency improvements of more than 3x at 940 nm.

Citation Download Citation

M. U. Pralle, J. E. Carey, H. Homayoon, J. Sickler, X. Li, J. Jiang, C. Hong, F. Sahebi, C. Palsule, and J. McKee "IR CMOS: ultrafast laser-enhanced silicon imaging", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83533H (31 May 2012); https://doi.org/10.1117/12.919530

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