31 May 2012 IR CMOS: ultrafast laser-enhanced silicon imaging
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Abstract
SiOnyx has developed a CMOS image sensor with enhanced infrared sensitivity. The technology deployed in this remarkable device is based on SiOnyx's proprietary ultrafast laser semiconductor process. We have established a high volume manufacturing process while maintaining complete compatibility with standard CMOS image sensor process flows. The enhanced performance proves the viability of a highly scalable low cost digital infrared sensor. The spectral sensitivity is from 400 to 1200 nm with measured quantum efficiency improvements of more than 3x at 940 nm.
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M. U. Pralle, M. U. Pralle, J. E. Carey, J. E. Carey, H. Homayoon, H. Homayoon, J. Sickler, J. Sickler, X. Li, X. Li, J. Jiang, J. Jiang, C. Hong, C. Hong, F. Sahebi, F. Sahebi, C. Palsule, C. Palsule, J. McKee, J. McKee, } "IR CMOS: ultrafast laser-enhanced silicon imaging", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83533H (31 May 2012); doi: 10.1117/12.919530; https://doi.org/10.1117/12.919530
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