31 May 2012 IR CMOS: ultrafast laser-enhanced silicon imaging
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SiOnyx has developed a CMOS image sensor with enhanced infrared sensitivity. The technology deployed in this remarkable device is based on SiOnyx's proprietary ultrafast laser semiconductor process. We have established a high volume manufacturing process while maintaining complete compatibility with standard CMOS image sensor process flows. The enhanced performance proves the viability of a highly scalable low cost digital infrared sensor. The spectral sensitivity is from 400 to 1200 nm with measured quantum efficiency improvements of more than 3x at 940 nm.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. U. Pralle, M. U. Pralle, J. E. Carey, J. E. Carey, H. Homayoon, H. Homayoon, J. Sickler, J. Sickler, X. Li, X. Li, J. Jiang, J. Jiang, C. Hong, C. Hong, F. Sahebi, F. Sahebi, C. Palsule, C. Palsule, J. McKee, J. McKee, } "IR CMOS: ultrafast laser-enhanced silicon imaging", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83533H (31 May 2012); doi: 10.1117/12.919530; https://doi.org/10.1117/12.919530

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