10 May 2012 Performance of bottom emitting isolated LWIR LED devices for IR scene projection
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Abstract
We report a significant increase in electroluminescence from GaSb based Long-wave infrared (LWIR) inter band cascade (IC) LED device by substrate thinning and isolating pixel from each other. We use bottom emitting LWIR LED array for isolating each pixel by chemical etching. We observed 300% increase in light emission power of etched device. We fabricated an IC LED device with thirty cascade active/injection layers with InAs/Ga1-xInxSb/InAs quantum well (QW) active region.
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Naresh C. Das "Performance of bottom emitting isolated LWIR LED devices for IR scene projection", Proc. SPIE 8356, Technologies for Synthetic Environments: Hardware-in-the-Loop XVII, 835605 (10 May 2012); doi: 10.1117/12.922916; https://doi.org/10.1117/12.922916
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