21 June 2012 Uncooled silicon carbide sensor producing optical signal
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Abstract
A novel approach will be discussed to design and fabricate sensors for a wide variety of wavelengths by selecting appropriate acceptor levels in a semiconductor material. An n-type 4H-SiC substrate has been doped with gallium using a laser doping method for sensing the MWIR wavelength of 4.21 mm. The incident MWIR photons change the electron densities in the valence band and the acceptor energy levels, modifying the reflectivity of the sensor. This change in the reflectivity is determined with a He-Ne laser as an optical signal and the sensor can be operated at room temperature. The effect of the photon collection optics on the sensor response has been studied. Also the dopant concentration has been found to affect the optical signal.
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Geunsik Lim, Tariq Manzur, Aravinda Kar, "Uncooled silicon carbide sensor producing optical signal", Proc. SPIE 8359, Sensors, and Command, Control, Communications, and Intelligence (C3I) Technologies for Homeland Security and Homeland Defense XI, 83591A (21 June 2012); doi: 10.1117/12.1000118; https://doi.org/10.1117/12.1000118
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