Preparation And Characterization Of RF Sputtered A-Si:H Films For Optoelectronic Device Applications.

J. J. Sluss Jr.; T. E. Batchman

doi:10.1117/12.967522

1 January 1987 Preparation And Characterization Of RF Sputtered A-Si:H Films For Optoelectronic Device Applications.

J. J. Sluss Jr., T. E. Batchman

Proceedings Volume 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects; (1987) https://doi.org/10.1117/12.967522
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States

Abstract

The preparation of hydrogenated amorphous silicon. (a-Si:H) thin films by RF sputtering has been investi-gated. Subsequent characterization of the properties of these films indicates that this manner of deposition is suitable for use in the fabrication of thin-film waveguide photodetectors.

Citation Download Citation

J. J. Sluss Jr. and T. E. Batchman "Preparation And Characterization Of RF Sputtered A-Si:H Films For Optoelectronic Device Applications.", Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); https://doi.org/10.1117/12.967522

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