3 May 2012 Characteristics of the large-area stacked microstructured semiconductor neutron detector
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Abstract
Silicon diodes with large aspect ratio microstructures backfilled with 6LiF show a dramatic increase in neutron detection efficiency beyond that of conventional thin-film coated planar devices. Described in this work are advancements in the technology with increased microstructure depths and detector stacking methods that work to increase thermal-neutron detection efficiency. An individual 4-cm2 MSND was fabricated. A stacked 4-cm2 MSND was fabricated by coupling two detectors back-to-back, along with counting electronics, into a single detector. The individual MSND delivered 16% intrinsic thermal-neutron detection efficiency and the stacked MSND delivered 32% intrinsic thermal-neutron detection efficiency. The intrinsic thermal-neutron detection efficiency depends strongly upon the geometry, size, and depth of the silicon microstructures. This work is part of on-going research to develop solid-state semiconductor neutron detectors with high neutron detection efficiencies.
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S. L. Bellinger, R. G. Fronk, T. J. Sobering, D. S. McGregor, "Characteristics of the large-area stacked microstructured semiconductor neutron detector", Proc. SPIE 8373, Micro- and Nanotechnology Sensors, Systems, and Applications IV, 83730I (3 May 2012); doi: 10.1117/12.919869; https://doi.org/10.1117/12.919869
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