Characteristics of the large-area stacked microstructured semiconductor neutron detector

S. L. Bellinger; R. G. Fronk; T. J. Sobering; D. S. McGregor

doi:10.1117/12.919869

3 May 2012 Characteristics of the large-area stacked microstructured semiconductor neutron detector

S. L. Bellinger; R. G. Fronk; T. J. Sobering; D. S. McGregor

Author Affiliations +

Proceedings Volume 8373, Micro- and Nanotechnology Sensors, Systems, and Applications IV; 83730I (2012) https://doi.org/10.1117/12.919869
Event: SPIE Defense, Security, and Sensing, 2012, Baltimore, Maryland, United States

Abstract

Silicon diodes with large aspect ratio microstructures backfilled with ⁶LiF show a dramatic increase in neutron detection efficiency beyond that of conventional thin-film coated planar devices. Described in this work are advancements in the technology with increased microstructure depths and detector stacking methods that work to increase thermal-neutron detection efficiency. An individual 4-cm² MSND was fabricated. A stacked 4-cm² MSND was fabricated by coupling two detectors back-to-back, along with counting electronics, into a single detector. The individual MSND delivered 16% intrinsic thermal-neutron detection efficiency and the stacked MSND delivered 32% intrinsic thermal-neutron detection efficiency. The intrinsic thermal-neutron detection efficiency depends strongly upon the geometry, size, and depth of the silicon microstructures. This work is part of on-going research to develop solid-state semiconductor neutron detectors with high neutron detection efficiencies.

Citation Download Citation

S. L. Bellinger, R. G. Fronk, T. J. Sobering, D. S. McGregor, "Characteristics of the large-area stacked microstructured semiconductor neutron detector", Proc. SPIE 8373, Micro- and Nanotechnology Sensors, Systems, and Applications IV, 83730I (3 May 2012); doi: 10.1117/12.919869; https://doi.org/10.1117/12.919869

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