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3 May 2012 Heterogeneous integration of semiconductor materials: basic issues, current progress, and future prospects
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Abstract
The world's dominant IC material, silicon, cannot do everything we want a semiconductor material to do. However, for this discussion, the fact that Si wafers are of high quality, large and cheap is of great interest. This is important for at least two reasons. First, nearly all of the electronic and photonic compound semiconductor devices that comprise the current $20 billion per year market are fabricated on substrates that are either very expensive or non-optimal for the epitaxy required to realize the device or an IC of interest. A second reason is the integration of new functionality to current Si technology. Clearly, if many of the current photonic applications already realized in current compound semiconductor technology could be integrated into Si technology, some of the herculean efforts to continue following Moore's Law (including trying to do it via nanotechnology) could be mitigated. This presentation examines some of the basic materials science issues involved with heterogeneous integration of semiconductor materials. These include those applications in which the active device region requires a high degree of crystal perfection and those that do not. Epitaxy issues at the hetero-interface, heterovalent versus homovalent epigrowth, and dislocation dynamics are presented. Notable historical examples are summarized, followed by examples of current successful approaches including the materials science concepts used to achieve the results. A list is made of some challenges that need to be solved in order to continue making future progress.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jerry M. Woodall "Heterogeneous integration of semiconductor materials: basic issues, current progress, and future prospects", Proc. SPIE 8373, Micro- and Nanotechnology Sensors, Systems, and Applications IV, 83731B (3 May 2012); https://doi.org/10.1117/12.917911
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