7 May 2012 SnO2-based memristors and the potential synergies of integrating memristors with MEMS
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Memristors, usually in the form metal/metal-oxide/metal, have attracted much attention due to their potential application for non-volatile memory. Their simple structure and ease of fabrication make them good candidates for dense memory with projections of 22 terabytes per wafer. Excellent switching times of ~10 ns, memory endurance of >109 cycles, and extrapolated retention times of >10 yrs have been reported. Interestingly, memristors use the migration of ions to change their resistance in response to charge flow, and can therefore measure and remember the amount of current that has flowed. This is similar to many MEMS devices in which the motion of mass is an operating principle of the device. Memristors are also similar to MEMS in the sense that they can both be resistant to radiation effects. Memristors are radiation tolerant since information is stored as a structural change and not as electronic charge. Functionally, a MEMS device's sensitivity to radiation is concomitant to the role that the dielectric layers play in the function of the device. This is due to radiation-induced trapped charge in the dielectrics which can alter device performance and in extreme cases cause failure. Although different material systems have been investigated for memristors, SnO2 has received little attention even though it demonstrates excellent electronic properties and a high resistance to displacement damage from radiation due to a large Frenkel defect energy (7 eV) compared its bandgap (3.6 eV). This talk discusses recent research on SnO2-based memristors and the potential synergies of integrating memristors with MEMS.
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David Zubia, David Zubia, Sergio Almeida, Sergio Almeida, Arka Talukdar, Arka Talukdar, Jose Mireles, Jose Mireles, Eric MacDonald, Eric MacDonald, } "SnO2-based memristors and the potential synergies of integrating memristors with MEMS", Proc. SPIE 8373, Micro- and Nanotechnology Sensors, Systems, and Applications IV, 83731V (7 May 2012); doi: 10.1117/12.921971; https://doi.org/10.1117/12.921971

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