Silicon single-photon avalanche diodes for high-performance parallel photon timing

Angelo Gulinatti; Ivan Rech; Corrado Cammi; Ivan Labanca; Piera Maccagnani; Massimo Ghioni

doi:10.1117/12.919373

22 May 2012 Silicon single-photon avalanche diodes for high-performance parallel photon timing

Angelo Gulinatti, Ivan Rech, Corrado Cammi, Ivan Labanca, Piera Maccagnani, Massimo Ghioni

Proceedings Volume 8375, Advanced Photon Counting Techniques VI; 83750N (2012) https://doi.org/10.1117/12.919373
Event: SPIE Defense, Security, and Sensing, 2012, Baltimore, Maryland, United States

Abstract

Thanks to the steady improvement in the detectors' performance, single-photon techniques are nowadays employed in a large number of applications ranging from single molecule dynamics to astronomy. In particular, silicon Single Photon Avalanche Diodes (SPAD) play a crucial role in this field thanks to their remarkable performance in terms of Photon Detection Efficiency (PDE), temporal response and Dark Count Rate (DCR). While CMOS technology allows the fabrication of large arrays of SPAD with built-in electronics, it is only resorting to custom fabrication processes that is possible to attain detectors with high-end performance required by most demanding applications. However, the fabrication of arrays for timing applications, even with a small number of pixels, is quite challenging with custom processes owing to electrical coupling between pixels. In this paper we will discuss technological solutions for the fabrication of arrays of high-performance SPAD for parallel photon timing.

Citation Download Citation

Angelo Gulinatti, Ivan Rech, Corrado Cammi, Ivan Labanca, Piera Maccagnani, and Massimo Ghioni "Silicon single-photon avalanche diodes for high-performance parallel photon timing", Proc. SPIE 8375, Advanced Photon Counting Techniques VI, 83750N (22 May 2012); https://doi.org/10.1117/12.919373

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