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22 May 2012 Development of small unit cell avalanche photodiodes for UV imaging applications
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High resolution imaging in the UV band has a lot of applications in defense and commercial systems. The shortest wavelength is desired for spatial resolution which allows for small pixels and large formats. UVAPD's have been demonstrated as discrete devices demonstrating gain. The next frontier is to develop UV APD arrays with high gain to demonstrate high resolution imaging. We will discuss model that can predict sensor performance in the UV band using APD's with various gain and other parameters for a desired UV band of interest. SNR's can be modeled from illuminated targets at various distances with high resolution under standard atmospheres in the UV band and the solar-blind region using detector arrays with unity gain and with high-gain APD's. We will present recent data on the GaN based APD's for their gain, detector response, dark current noise and the 1/f noise. We will discuss various approaches and device designs that are being evaluated for developing APD's in wide band gap semiconductors. The paper will also discuss state-of-the-art in UV APDs and the future directions for small unit cell size and gain in the APD's.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ashok K. Sood, Roger E. Welser, Robert A. Richwine, Yash R. Puri, Russell D. Dupuis, Jae-Hyun Ryou, Nibir K. Dhar, P. Suvarna, and F. Shahedipour-Sandvik "Development of small unit cell avalanche photodiodes for UV imaging applications", Proc. SPIE 8375, Advanced Photon Counting Techniques VI, 83750R (22 May 2012);


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