19 May 2012 Monolithic integration of high-speed Ge photo-detectors on SOI-based WDM receivers
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Abstract
We report a novel, compact design of high speed Ge photo detector integrated with an echelle demultiplexer on a large cross-section SOI platform with low insertion loss and low fiber coupling loss. A narrow Ge photo detector waveguide is directly butt-coupled to a Si waveguide to ensure low loss and high speed operation. With a Ge detector size of only 0.8×15 μm2, the device achieves greater than 30 GHz modulation speed. The results indicate that the device speed is transit time limited and that the detector performance benefits from the high electron and hole drift velocity of germanium. The dark current of the detector is less than 0.5μA at -1V. This small footprint high speed Si-based WDM receiver can be fabricated using CMOS processes and used for multichannel terabit data transmission with low manufacturing cost.
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Wei Qian, Dazeng Feng, Hong Liang, Joe Zhou, Yong Liu, Shirong Liao, Cheng-Chih Kung, Joan Fong, B. Jonathan Luff, Roshanak Shafiiha, Daniel Lee, Wayne White, Mehdi Asghari, "Monolithic integration of high-speed Ge photo-detectors on SOI-based WDM receivers", Proc. SPIE 8376, Photonic Microdevices/Microstructures for Sensing IV, 83760P (19 May 2012); doi: 10.1117/12.920831; https://doi.org/10.1117/12.920831
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