24 May 2012 III-V nitride semiconductors for solar hydrogen production
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Abstract
Photoelectrochemical cells are devices that can convert solar radiation to hydrogen gas through a water decomposition process. In this process, energy is converted from incident photons to the bonds of the generated H2 molecules. The solar radiation absorption, electron-hole pair splitting, and photoelectrolysis half reactions all occur in the vicinity of the electrode-electrolyte interface. As a result, engineering the electrode material and its interaction with the electrolyte is important in investigating and improving the energy conversion process in these devices. III-V nitride materials are promising candidates for photoelectrochemical energy applications. We demonstrate solar-to-hydrogen conversion in these cells using p-type GaN and n-type InGaN as a photocathode and photoanode material, respectively. Additionally, we demonstrate heteroepitaxial MOCVD growth of GaP on Si, enabling future work in developing GaPN as a photocathode material.
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Vijay Parameshwaran, Vijay Parameshwaran, Chad Gallinat, Chad Gallinat, Ryan W. Enck, Ryan W. Enck, Anand V. Sampath, Anand V. Sampath, Paul H. Shen, Paul H. Shen, Tevye Kuykendall, Tevye Kuykendall, Shaul Aloni, Shaul Aloni, Michael Wraback, Michael Wraback, Bruce M. Clemens, Bruce M. Clemens, } "III-V nitride semiconductors for solar hydrogen production", Proc. SPIE 8377, Energy Harvesting and Storage: Materials, Devices, and Applications III, 83770B (24 May 2012); doi: 10.1117/12.925200; https://doi.org/10.1117/12.925200
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