24 May 2012 Quantum-structured III-V energy harvesting devices: pathways to ultra-high conversion efficiencies
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Abstract
Quantum-structured photovoltaic devices incorporating III-V quantum wells or quantum dots have the potential to dramatically increase the performance of energy harvesting devices. In this work, the dark current of high-voltage InGaAs quantum well structures is characterized, and the underlying saturation current density analyzed as a function of effective energy gap. Analysis of the current-voltage characteristics suggests that these advanced quantum well device structures are operating in a regime of suppressed radiative recombination. High-voltage output from quantum-structured energy harvesting devices, coupled with advances in the field of light trapping, provides a pathway for achieving ultra-high conversion efficiencies.
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Roger E. Welser, Roger E. Welser, Ashok K. Sood, Ashok K. Sood, Nibir K. Dhar, Nibir K. Dhar, Priyalal S. Wijewarnasuriya, Priyalal S. Wijewarnasuriya, } "Quantum-structured III-V energy harvesting devices: pathways to ultra-high conversion efficiencies", Proc. SPIE 8377, Energy Harvesting and Storage: Materials, Devices, and Applications III, 83770E (24 May 2012); doi: 10.1117/12.922917; https://doi.org/10.1117/12.922917
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