14 May 2012 Hybrid metrology for critical dimension based on scanning methods for IC manufacturing
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Abstract
Introduction of new material stacks, more sophisticated design rules and complex 3D architectures in semiconductor technology has led to major metrology challenges by posing stringent measurement precision and accuracy requirements for various critical dimensions (CD), feature shape and profile. Current CD metrology techniques being used in R&D and production such as CD-SEM, Scatterometry, CD-AFM, TEM have their inherent limitations that must be overcome to fulfil advanced roadmap requirements. The approach of hybrid automated CD metrology seems necessary. Using multiple tools in unison is an adequate solution when adding their respective strengths to overcome individual limitations. Such solution should give the industry a better metrology solution than the conventional approach. In this work, we will present and discuss a new methodology of CD metrology so-called hybrid CD metrology that mixes CD data coming from different techniques. In parallel to this hybrid metrology approach, we must address individual technique enhancement. Subsequently, scanning techniques enhancement will be presented (CD-SEM and CD-AFM) through contour metrology parameter which should become a pedestal feature for 1x node production. Finally, we will discuss the potential directions of a hybrid metrology engine as a generic tool compatible with any kind of CD metrology techniques.
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J. Foucher, N. Griesbach Schuch Figueiro, J. Rouxel, R. Thérèse, "Hybrid metrology for critical dimension based on scanning methods for IC manufacturing", Proc. SPIE 8378, Scanning Microscopies 2012: Advanced Microscopy Technologies for Defense, Homeland Security, Forensic, Life, Environmental, and Industrial Sciences, 83780F (14 May 2012); doi: 10.1117/12.919650; https://doi.org/10.1117/12.919650
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