Introduction of new material stacks, more sophisticated design rules and complex 3D architectures in
semiconductor technology has led to major metrology challenges by posing stringent measurement
precision and accuracy requirements for various critical dimensions (CD), feature shape and profile.
Current CD metrology techniques being used in R&D and production such as CD-SEM, Scatterometry,
CD-AFM, TEM have their inherent limitations that must be overcome to fulfil advanced roadmap
requirements. The approach of hybrid automated CD metrology seems necessary. Using multiple tools in
unison is an adequate solution when adding their respective strengths to overcome individual limitations.
Such solution should give the industry a better metrology solution than the conventional approach.
In this work, we will present and discuss a new methodology of CD metrology so-called hybrid CD
metrology that mixes CD data coming from different techniques. In parallel to this hybrid metrology
approach, we must address individual technique enhancement. Subsequently, scanning techniques
enhancement will be presented (CD-SEM and CD-AFM) through contour metrology parameter which
should become a pedestal feature for 1x node production. Finally, we will discuss the potential directions
of a hybrid metrology engine as a generic tool compatible with any kind of CD metrology techniques.