Paper
23 May 2012 Correlation of mid-infrared quantum-cascade laser performance with laser design parameters
R. P. Leavitt, J. L. Bradshaw, K. M. Lascola, F. J. Towner, J. T. Pham, J. D. Bruno, C. F. Gmachl, P. Q. Liu
Author Affiliations +
Abstract
Several different quantum-cascade (QC) laser designs spanning the wavelength range between ~3.8 and ~4.8 microns were grown, and devices were fabricated and tested. The active regions of these designs consist of strained layers of (In,Ga)As and (In,Al)As. For several of these designs, we varied design parameters including injector doping, sectioncoupling strength, and the number of QC laser periods. Lasers were tested near room temperature under both quasi-cw and low-duty-cycle conditions. Device performance is compared with theoretical expectations, and conclusions are reached on the relative merit of various design modifications.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. P. Leavitt, J. L. Bradshaw, K. M. Lascola, F. J. Towner, J. T. Pham, J. D. Bruno, C. F. Gmachl, and P. Q. Liu "Correlation of mid-infrared quantum-cascade laser performance with laser design parameters", Proc. SPIE 8381, Laser Technology for Defense and Security VIII, 83810D (23 May 2012); https://doi.org/10.1117/12.918632
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KEYWORDS
Semiconducting wafers

Quantum cascade lasers

Laser development

Mid-IR

Doping

Laser applications

Pulsed laser operation

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