7 May 2012 Modeling of the type-II InGaAs/GaAsSb quantum well designs for mid-infrared laser diodes by k•p method
Author Affiliations +
Abstract
Different type-II InGaAs/GaAsSb quantum well design structures on InP substrate for mid-infrared emission has been modeled by six band k•p method. The dispersion relations, optical matrix element, optical gain and spontaneous emission rate are calculated. The effects of the parameters of quantum wells (thickness, composition) and properties of cladding layers were investigated. For injected carrier concentration of 5×1012 cm-2, peak gain values around 2.6-2.7 μm wavelengths of the order of 1000 cm-1 can be achieved, which shows that type-II InGaAs/GaAsSb quantum wells are suitable for infrared laser operation beyond 2μm at room temperature.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Baile Chen, Baile Chen, A. L. Holmes, A. L. Holmes, Viktor Khalfin, Viktor Khalfin, Igor Kudryashov, Igor Kudryashov, Bora M. Onat, Bora M. Onat, "Modeling of the type-II InGaAs/GaAsSb quantum well designs for mid-infrared laser diodes by k•p method", Proc. SPIE 8381, Laser Technology for Defense and Security VIII, 83810F (7 May 2012); doi: 10.1117/12.918764; https://doi.org/10.1117/12.918764
PROCEEDINGS
7 PAGES


SHARE
Back to Top