Paper
11 May 2012 Laser material properties of Dy:YAG
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Abstract
First operation of the 4F 9 / 26H 13 / 2 laser transition in dysprosium doped yttrium aluminum garnet is reported. Room temperature operation at 582.7nm was obtained using 447nm GaN diode lasers pumps. Gaussian single-mode operation was demonstrated with a non-optimized slope efficiency of 12%. Millisecond pulsed operation generated 150mW with power limited by the pump diodes brightness. An emission cross section of 4.1E-21cm2 at 582.7nm was determined by laser threshold analysis.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. O'Connor, S. R. Bowman, and N. J. Condon "Laser material properties of Dy:YAG", Proc. SPIE 8381, Laser Technology for Defense and Security VIII, 83811H (11 May 2012); https://doi.org/10.1117/12.921030
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KEYWORDS
Diodes

Semiconductor lasers

Gallium nitride

Absorption

Luminescence

YAG lasers

Dysprosium

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