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24 May 2012 Low-noise UV-to-SWIR broadband photodiodes for large-format focal plane array sensors
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Abstract
Broadband focal plane array sensors, operating in the 0.25 to 2.5 μm wavelength range, are an enabling technology for several imaging applications including atmospheric greenhouse gas monitoring. Currently, hyper-spectral imagers use separate image sensors for different spectral sub-bands, for example GaN for UV, Si for visible, and InGaAs for IR, thus requiring expensive component-level integration. Our approach is to manufacture a single image sensor with 0.25 to 2.5 μm spectral range using GaAs substrates, which are commercially available in diameters as large as 6 inches. The key challenges, namely achieving high UV efficiency, low dark current, and high speed operation, are addressed separately in a lattice-matched GaAs UV-to-Visible photodiode and a lattice-mismatched InGaAs NIR-to-SWIR photodiode. The method for monolithically combining the two structures into a single UV-to-SWIR photodiode / photodiode array is also presented.
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Abhay Joshi and Shubhashish Datta "Low-noise UV-to-SWIR broadband photodiodes for large-format focal plane array sensors", Proc. SPIE 8385, Sensors and Systems for Space Applications V, 838507 (24 May 2012); https://doi.org/10.1117/12.919254
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