Avalanche Photodiodes For High-Bit-Rate Lightwave Systems

J. C. Campbell

doi:10.1117/12.942557

4 February 1988 Avalanche Photodiodes For High-Bit-Rate Lightwave Systems

J. C. Campbell

Author Affiliations +

Proceedings Volume 0839, Components for Fiber Optic Applications II; (1988) https://doi.org/10.1117/12.942557
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States

Abstract

Avalanche photodiodes (APDs) capable of providing useful gain at microwave frequencies are vital components for future multi-gigabit/s lightwave transmission systems. To date, the APD structure that has shown the most promise for high frequency operation consists of a wide-bandgap multiplication region and a narrow-bandgap absorbing layer separated by a transition region to reduce charge accumulation at the heterojunction interfaces (SAGM-APD). InP/InGaAsP/InGaAs APDs of this type have exhibited bandwidths as high as 8 GHz and gain-bandwidth products of 70 GHz. In this paper we discus the physical effects that determine their speed and project performance limits.

Citation Download Citation

J. C. Campbell "Avalanche Photodiodes For High-Bit-Rate Lightwave Systems", Proc. SPIE 0839, Components for Fiber Optic Applications II, (4 February 1988); https://doi.org/10.1117/12.942557

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE