12 April 2012 Approach to a creation of silicon-silicide smart materials for silicon-based thermoelectronics and photonics
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Proceedings Volume 8409, Third International Conference on Smart Materials and Nanotechnology in Engineering; 84091W (2012) https://doi.org/10.1117/12.923310
Event: Third International Conference on Smart Materials and Nanotechnology in Engineering, 2011, Shenzhen, China
Abstract
Optimization of growth parameters has permitted to create monolithic nanocomposites with buried nanocrystals (NCs) of iron and chromium disilicides and polycrystalline nanocomposites with buried Mg2Si NCs (3-40 nm) on the base of reactive deposition epitaxy (RDE), solid phase epitaxy(SPE) and molecular beam epitaxy (MBE), which demonstrated wonderful thermoelectrical properties and the possibility of strong light emission with wavelength of 1.2 - 1.6 microns in the mesa-diode structures with p-n junction at direct and back bias. Doping process of Mg2Si nanocrystals inside nanocomposite layers was developed on the base of ordered surface phases of metals on a silicon substrate. Nanocomposite layers with n- and p-type conductivity have been successfully grown. The huge increase of Zeebeck coefficient in the Si-p/β-FeSi2 NCs/Si-p and Si/Mg2Si NCs/Si nanocomposites has been found.
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N. G. Galkin, E. A. Chusovitin, K. N. Galkin, D. L. Goroshko, T. S. Shamirsaev, "Approach to a creation of silicon-silicide smart materials for silicon-based thermoelectronics and photonics", Proc. SPIE 8409, Third International Conference on Smart Materials and Nanotechnology in Engineering, 84091W (12 April 2012); doi: 10.1117/12.923310; https://doi.org/10.1117/12.923310
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