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25 January 2012 Properties of nano-structured cuprous oxide thin films fabricated by thermal oxidation of copper layer
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Proceedings Volume 8414, Photonics and Micro- and Nano-structured Materials 2011; 841406 (2012) https://doi.org/10.1117/12.923127
Event: Photonics and Micro- and Nano- structured Materials 2011, 2011, Yerevan, Armenia
Abstract
Among the potential photovoltaic devices based on semiconductor oxides as active layer is cuprous oxide (Cu2O). Although the theoretical limit of Cu2O solar cell efficiency is 20%, the best efficiency obtained up to now is only 2%. This is due to a very limited amount of work devoted to this semiconductor and only during last few years this material has been investigated for solar cells applications. In this work we report our results of optical, structural and surface morphology investigations of Cu2O films prepared by thermal oxidation of copper layer. The effects of oxidation temperature and oxygen partial pressure on surface morphology and crystalline structure of Cu2O films were studied. Scanning electron microscope results have shown that Cu2O films have microcrystalline structure with grain size of about 5-15 μm. Analysis of fine structure shows typical lattice spacing of cubic Cu2O structure. X-ray investigations have shown that the films consist of single Cu2O phase without any interstitial phase and have a nano-grain structure. The grains have an average dimensions about (33-41) nm. Optical investigations have shown that the absorption edge of prepared films is due to a direct allowed transition. The value of the optical band gap is 2.08 eV.
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Vladimir Gevorgyan, Anna Reymers, Manuk Nersesyan, Serge Nitsche, Suzanne Giorgio, Artak Karapetyan, and Wladimir Marine "Properties of nano-structured cuprous oxide thin films fabricated by thermal oxidation of copper layer", Proc. SPIE 8414, Photonics and Micro- and Nano-structured Materials 2011, 841406 (25 January 2012); https://doi.org/10.1117/12.923127
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