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25 January 2012 Electric field tuning of the band gap in four layers of graphene with different stacking order
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Proceedings Volume 8414, Photonics and Micro- and Nano-structured Materials 2011; 84140D (2012) https://doi.org/10.1117/12.923618
Event: Photonics and Micro- and Nano- structured Materials 2011, 2011, Yerevan, Armenia
Abstract
We investigated the effect of different stacking order of the four graphene layer system on the induced band gap when positively charged top and negatively charged back gates are applied to the system. A tight-binding approach within a self-consistent Hartree approximation is used to calculate the induced charges on the different graphene layers. We show that the electric field does not open an energy gap if the multilayer graphene system contains a trilayer part with the ABA Bernal stacking.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Artak A. Avetisyan, Bart Partoens, and Francois M. Peeters "Electric field tuning of the band gap in four layers of graphene with different stacking order", Proc. SPIE 8414, Photonics and Micro- and Nano-structured Materials 2011, 84140D (25 January 2012); https://doi.org/10.1117/12.923618
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