26 January 2012 Shallow donor near a semiconductor surface in the presence of locally spherical scanning tunneling microscope tip
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Proceedings Volume 8414, Photonics and Micro- and Nano-structured Materials 2011; 84140L (2012); doi: 10.1117/12.923562
Event: Photonics and Micro- and Nano- structured Materials 2011, 2011, Yerevan, Armenia
Abstract
We developed a variational approach to investigate the ground state energy and the extend of the wavefunction of a neutral donor located near a semiconductor surface in the presence of scanning tunneling microscope (STM) metallic tip. We apply the effective mass approximation and use a variational wavefunction that takes into account the influence of all image charges that arise due to the presence of a metallic tip. The behavior of the ground state energy when the tip approaches the semiconductor surface is investigated.
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A. P Djotyan, A. A. Avetisyan, Y. L. Hao, F. M Peeters, "Shallow donor near a semiconductor surface in the presence of locally spherical scanning tunneling microscope tip", Proc. SPIE 8414, Photonics and Micro- and Nano-structured Materials 2011, 84140L (26 January 2012); doi: 10.1117/12.923562; https://doi.org/10.1117/12.923562
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KEYWORDS
Semiconductors

Scanning tunneling microscopy

Interfaces

Optical spheres

Chemical species

Barium

Spherical lenses

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