16 October 2012 Influence of substrate rotating on the microstructure and surface morphology of Ge and Si thin films
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Proceedings Volume 8416, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 84160V (2012); doi: 10.1117/12.971477
Event: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), 2012, Xiamen, China
Abstract
The influence of substrate rotating on the microstructure and surface morphology has been investigated on Ge and Si film. In this paper, the Ge and Si optical thin films were chosen to be research objects. The thin films were prepared on Al2O3 substrate by electron beam evaporation in about 5×10-4 Pa vacuum pressure in two deposited methods: rotating substrate and not rotating substrate. The films were observed and analyzed by X-ray diffraction analyzer, scanning electron microscopy and atomic force microscopy. According to the wavelength deviation dispersion theory, the packing density has been calculated. The results show that: in the two deposition methods, the films both are non-crystalline state and compact, the film surface morphology is basically same and no significant defference in surface roughness, but the film on no rotating substrate has higher packing density.
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Haihan Luo, Dingquan Liu, Xin Yin, "Influence of substrate rotating on the microstructure and surface morphology of Ge and Si thin films", Proc. SPIE 8416, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 84160V (16 October 2012); doi: 10.1117/12.971477; https://doi.org/10.1117/12.971477
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KEYWORDS
Thin films

Germanium

Silicon

Silicon films

Thin film deposition

Scanning electron microscopy

Atomic force microscopy

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