16 October 2012 Preferential sputtering of Ar ion processing SiO2 mirror
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Proceedings Volume 8416, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 84162L (2012) https://doi.org/10.1117/12.973697
Event: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), 2012, Xiamen, China
Abstract
In the optical processing, ion beam processing has been used widely for the advantages of highly-precision, less pollution and no stress and distortion. In order to analysis the preferential sputtering phenomenon, that Ar ion processing SiO2 mirror is considered as an example, which is commonly done in ion beam processing. In order to improve the processing precision, the influence of Ar ion incident angle and incident energy on SiO2 sputtering yield is analyzed in the case of considering the preferential sputtering phenomenon. By using the TRIM 2008 software, the sputtering situation of two elements of Si and O are simulated. The sputtering yield rate of the two elements is always a certain proportion, and the ratio is not related with the incident angle and it almost stays the same in a certain energy range. So, the SiO2 can be thought as a whole when considering its sputtering yield, which equals to the sum of Si and O sputtering yield.
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Guping Duan, Tingwen Xing, Yun Li, "Preferential sputtering of Ar ion processing SiO2 mirror", Proc. SPIE 8416, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 84162L (16 October 2012); doi: 10.1117/12.973697; https://doi.org/10.1117/12.973697
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