Stress evolution in evaporated HfO[sub]2[/sub]/SiO[sub]2[/sub] multilayers

Jingping Li; Ming Fang; Hongbo He; Jianda Shao

doi:10.1117/12.971422

15 October 2012 Stress evolution in evaporated HfO₂/SiO₂ multilayers

Jingping Li, Ming Fang, Hongbo He, Jianda Shao

Proceedings Volume 8417, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment; 84173N (2012) https://doi.org/10.1117/12.971422
Event: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), 2012, Xiamen, China

Abstract

Hafnium oxide/silicon dioxide (HfO₂/SiO₂) multilayers were prepared by electron-beam evaporation. The total force per unit width (F/w) during and after deposition was determined by the change of the substrate curvature measured in situ. Stress induced by water absorption is a major component of the film stress evolution in atmospheric environment. Growth stress was analyzed to understand the role of the sublayers and the influence of the underlayers’ structural features. The substrate material affects the stress evolutions in both HfO₂ films and SiO₂ films. The structural feature of the HfO₂ layer onto which SiO₂ was deposited has a significant effect on the stress evolution of the SiO₂ layer.

Citation Download Citation

Jingping Li, Ming Fang, Hongbo He, and Jianda Shao "Stress evolution in evaporated HfO₂/SiO₂ multilayers", Proc. SPIE 8417, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, 84173N (15 October 2012); https://doi.org/10.1117/12.971422

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