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15 October 2012 The cross talk of multi-errors impact on lithography performance and the method of its control
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As semiconductor feature sizes continue to shrink, the allowable error margins for Critical Dimension (CD) is getting increasingly tight. However multiple errors are inherent in the lithography system which could have severe impact on CD control and process latitude. It is indispensable to analyze and balance the influences of various errors in order to get larger tolerance for errors within allowable error margins for CD. In this paper, by using PROLITHTM X3 and in-house software IntLitho, we study the cross-talk of the dominative errors of numerical aperture, coherent factors, mask CD, flare and analyze its influence on lithography performance. The results show that the tolerance for the errors can be released when some errors impact on CD is counterpoised by that arising from another error in usable process window. Moreover multiple combinations of errors or tolerances can be used for such compensations. Finally we supply a method to perform the compensation of multi errors impact on CD and process window, which is the essence of co-design or cooptimization of lithography tool for rigorous CD control.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yanqiu Li, Chunying Han, Xuejia Guo, Lihui Liu, Xuxia Wang, and Jianhong Yang "The cross talk of multi-errors impact on lithography performance and the method of its control", Proc. SPIE 8418, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems, 841802 (15 October 2012);

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