Impact of MSD and mask manufacture errors on 45nm-node lithography

Chunying Han; Yanqiu Li; Lihui Liu; Xuejia Guo; Xuxia Wang; Jianhong Yang

doi:10.1117/12.978262

15 October 2012 Impact of MSD and mask manufacture errors on 45nm-node lithography

Chunying Han, Yanqiu Li, Lihui Liu, Xuejia Guo, Xuxia Wang, Jianhong Yang

Author Affiliations +

Proceedings Volume 8418, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems; 84180B (2012) https://doi.org/10.1117/12.978262
Event: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), 2012, Xiamen, China

Abstract

Critical Dimension Uniformity (CDU) is quite sensitive in 45nm node lithography and beyond, thus, more attentions should be paid on the controlling of CDU. Moving Standard Deviation (MSD) and Mask Manufacture Errors (MMEs) including the Mask Critical Dimension Error (MCDE), Mask Transmittance Error (MTE) and Mask Phase Error (MPE) are the two important factors influencing CDU. The study on the impact of MSD and MMEs is a helpful way to improve the lithographic quality. Previous researches often emphasize on the single impact of MSD or MMEs, however the impact of both of them usually exists simultaneously. The studies on the co-impact of MSD and MMEs are more significant. In this paper, the impact and the cross-talk between MSD and MMEs on Critical Dimension (CD) and Exposure Latitude verse Depth of Focus (EL-DOF) for different pattern under various illumination conditions have been evaluated by simulation, which is carried on PROLITH^TM X3 and in-house software IntLitho. And then, the MSD’s tolerance with the existence of MMEs is discussed. The simulation results show that CD error caused by the co-existence of MSD and MMEs is not the simple algebraic sum of the individual CD error caused by MSD or MMEs. The CD error becomes more pronounced when the MSD and MMEs interact with each other. The studies on the tolerance reveal that the tolerance of MSD decreases due to MMEs’ existence and mainly depends on the mask pattern’s pitch.

Citation Download Citation

Chunying Han, Yanqiu Li, Lihui Liu, Xuejia Guo, Xuxia Wang, and Jianhong Yang "Impact of MSD and mask manufacture errors on 45nm-node lithography", Proc. SPIE 8418, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems, 84180B (15 October 2012); https://doi.org/10.1117/12.978262

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
10 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Lithography

Photomasks

Lithographic illumination

Critical dimension metrology

Tolerancing

Manufacturing

Transmittance

Show All Keywords

Keywords/Phrases

Search In:

Publication Years