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15 October 2012 Impact of MSD and mask manufacture errors on 45nm-node lithography
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Abstract
Critical Dimension Uniformity (CDU) is quite sensitive in 45nm node lithography and beyond, thus, more attentions should be paid on the controlling of CDU. Moving Standard Deviation (MSD) and Mask Manufacture Errors (MMEs) including the Mask Critical Dimension Error (MCDE), Mask Transmittance Error (MTE) and Mask Phase Error (MPE) are the two important factors influencing CDU. The study on the impact of MSD and MMEs is a helpful way to improve the lithographic quality. Previous researches often emphasize on the single impact of MSD or MMEs, however the impact of both of them usually exists simultaneously. The studies on the co-impact of MSD and MMEs are more significant. In this paper, the impact and the cross-talk between MSD and MMEs on Critical Dimension (CD) and Exposure Latitude verse Depth of Focus (EL-DOF) for different pattern under various illumination conditions have been evaluated by simulation, which is carried on PROLITHTM X3 and in-house software IntLitho. And then, the MSD’s tolerance with the existence of MMEs is discussed. The simulation results show that CD error caused by the co-existence of MSD and MMEs is not the simple algebraic sum of the individual CD error caused by MSD or MMEs. The CD error becomes more pronounced when the MSD and MMEs interact with each other. The studies on the tolerance reveal that the tolerance of MSD decreases due to MMEs’ existence and mainly depends on the mask pattern’s pitch.
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Chunying Han, Yanqiu Li, Lihui Liu, Xuejia Guo, Xuxia Wang, and Jianhong Yang "Impact of MSD and mask manufacture errors on 45nm-node lithography", Proc. SPIE 8418, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems, 84180B (15 October 2012); https://doi.org/10.1117/12.978262
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