15 October 2012 Modeling of strain and stress distribution of HgCdTe/CdTe/Si(211) heterostructure
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Abstract
The strain and stress distribution in HgCdTe/CdTe/Si heterostructure (Si 500μm, CdTe 10μm, HgCdTe 10μm) were described by theoretical calculation. The results showed that the strain and stress profiles and curvature radius of HgCdTe/CdTe/Si oriented in asymmetry [211] direction, are asymmetric along in-plane direction along [1-1-1] and [01-1]. The strain of epilayer and substrate are both negative at 77K. The stress at the interface is the largest in this heterostructure. The stress in epilayer is tensile while in substrate it is compressive on the side of interface and tensile on the other side. And a quantitative reference of the Si substrate thickness for a hybrid infrared focal plane arrays was provided.
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Yuan-zhang Wang, Yuan-zhang Wang, Lu Chen, Lu Chen, Xiang-liang Fu, Xiang-liang Fu, } "Modeling of strain and stress distribution of HgCdTe/CdTe/Si(211) heterostructure", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 841906 (15 October 2012); doi: 10.1117/12.977794; https://doi.org/10.1117/12.977794
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