Translator Disclaimer
15 October 2012 Modeling of strain and stress distribution of HgCdTe/CdTe/Si(211) heterostructure
Author Affiliations +
The strain and stress distribution in HgCdTe/CdTe/Si heterostructure (Si 500μm, CdTe 10μm, HgCdTe 10μm) were described by theoretical calculation. The results showed that the strain and stress profiles and curvature radius of HgCdTe/CdTe/Si oriented in asymmetry [211] direction, are asymmetric along in-plane direction along [1-1-1] and [01-1]. The strain of epilayer and substrate are both negative at 77K. The stress at the interface is the largest in this heterostructure. The stress in epilayer is tensile while in substrate it is compressive on the side of interface and tensile on the other side. And a quantitative reference of the Si substrate thickness for a hybrid infrared focal plane arrays was provided.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuan-zhang Wang, Lu Chen, and Xiang-liang Fu "Modeling of strain and stress distribution of HgCdTe/CdTe/Si(211) heterostructure", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 841906 (15 October 2012);


An infrared journey
Proceedings of SPIE (June 04 2015)
The study of selective heating of indium bump in MCT...
Proceedings of SPIE (October 15 2012)
Silicon infrared focal plane arrays
Proceedings of SPIE (June 12 2001)
Collective flip-chip technology for hybrid focal plane arrays
Proceedings of SPIE (December 15 2000)
Collective flip-chip technology for HgCdTe IRFPA
Proceedings of SPIE (September 25 1996)

Back to Top