High performance organic field-effect transistor with oxide/metal bilayer electrodes

Xinge Yu; Junsheng Yu; Wei Huang; Shijiao Han; Yadong Jiang

doi:10.1117/12.977848

15 October 2012 High performance organic field-effect transistor with oxide/metal bilayer electrodes

Xinge Yu, Junsheng Yu, Wei Huang, Shijiao Han, Yadong Jiang

Proceedings Volume 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy; 84190E (2012) https://doi.org/10.1117/12.977848
Event: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), 2012, Xiamen, China

Abstract

Pentacene organic field-effect transistors (OFETs) were fabricated by inserting a thin metallic oxide material MoO₃ between pentacene and gold (Au) electrodes as an interlayer. Comparing with the corresponding single layer OFETs without any interlayer, theses OFETs with a thin MoO₃ interlayer showed an obvious enhancement of hole mobility and slightly decrease of threshold voltage. The improvement of performance was investigated by interfacial energy level of the organic/metal interface, which showed that the MoO₃ interlayer could significantly reduce the injection barrier between Au and pentacene. Moreover, the reduction of the injection barrier leads to a decrease of contact resistance at organic/metal interface, which improve the performance of the devices.

Citation Download Citation

Xinge Yu, Junsheng Yu, Wei Huang, Shijiao Han, and Yadong Jiang "High performance organic field-effect transistor with oxide/metal bilayer electrodes", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84190E (15 October 2012); https://doi.org/10.1117/12.977848

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