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15 October 2012 Front-illuminated planar type InGaAs sub-pixels infrared detector
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Abstract
This article presents the fabrication of the front-illuminated planar type InGaAs sub-pixels infrared detector with the cutoff wavelength 1.68µm based on the lateral collection effect of photogenerated carriers. The detector with the dimension of 385µm×500µm consists of five sub-pixels and each of which has two sub-elements. The electrical properties and photo response characteristics were investigated after the detector mounted on Dewar. The photoresponse map from Laser beam induced current (LBIC) method shows that the detector has good photoresponse uniformity at 296K which indicates the electron/hole pairs generated in the lateral collection regions are all collected by the nearest sub-elements. The minority carrier diffusion length Lp is about 19.6µm at 296K. The density of dark current is 13.4nA/cm2 at 100mV reverse bias and the peak detectivity is 3.4×1012cmHz1/2W-1 at room temperature. By reducing the diffusion region, the detector could effectively decrease the lattice damage and corrosion spots in the cap layer caused in the PN junction formation without sacrificing detector performance. Therefore, this structure could availably reduce the ratio of dead pixels, suppress the extension of photo-sensitive area and the optical cross-talk in photo detector arrays.
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Honghai Deng, Peng Wei, Hengjing Tang, Tao Li, Yaoming Zhu, Xue Li, and Haimei Gong "Front-illuminated planar type InGaAs sub-pixels infrared detector", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84190Q (15 October 2012); https://doi.org/10.1117/12.973679
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