Single crystalline InAsxSb1-x grown on (100) InSb substrate by liquid phase epitaxy

Changhong Sun; Shuhong Hu; Qiwei Wang; Feng Qiu; Yingfei Lv; Huiyong Deng; Yan Sun; Ning Dai

doi:10.1117/12.975813

15 October 2012 Single crystalline InAs_xSb_1-x grown on (100) InSb substrate by liquid phase epitaxy

Changhong Sun, Shuhong Hu, Qiwei Wang, Feng Qiu, Yingfei Lv, Huiyong Deng, Yan Sun, Ning Dai

Proceedings Volume 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy; 84191E (2012) https://doi.org/10.1117/12.975813
Event: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), 2012, Xiamen, China

Abstract

Single crystalline InAs_0.016Sb_0.984 film has been successfully grown on (100) InSb substrate by LPE method. A large supercooling (ΔT = 15 °C) had been used to prevent substrate from dissolving into the epilayer. High resolution X-ray diffraction (HRXRD) measurement was used to characterize the crystal quality of the film. Only (200) and (400) peaks were observed from the XRD spectrum, indicating that the film was single crystalline with (100) orientation. The Fourier transform infrared (FTIR) transmission spectrum of the film at room temperature revealed 7.77 μm cut-off wavelength of the film. The lattice dynamics of the epilayer was studied by Raman scattering, suggests two-mode behavior of the optical phonons.

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Changhong Sun, Shuhong Hu, Qiwei Wang, Feng Qiu, Yingfei Lv, Huiyong Deng, Yan Sun, and Ning Dai "Single crystalline InAs_xSb_1-x grown on (100) InSb substrate by liquid phase epitaxy", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84191E (15 October 2012); https://doi.org/10.1117/12.975813

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