15 October 2012 Single crystalline InAsxSb1-x grown on (100) InSb substrate by liquid phase epitaxy
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Abstract
Single crystalline InAs0.016Sb0.984 film has been successfully grown on (100) InSb substrate by LPE method. A large supercooling (ΔT = 15 °C) had been used to prevent substrate from dissolving into the epilayer. High resolution X-ray diffraction (HRXRD) measurement was used to characterize the crystal quality of the film. Only (200) and (400) peaks were observed from the XRD spectrum, indicating that the film was single crystalline with (100) orientation. The Fourier transform infrared (FTIR) transmission spectrum of the film at room temperature revealed 7.77 μm cut-off wavelength of the film. The lattice dynamics of the epilayer was studied by Raman scattering, suggests two-mode behavior of the optical phonons.
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Changhong Sun, Changhong Sun, Shuhong Hu, Shuhong Hu, Qiwei Wang, Qiwei Wang, Feng Qiu, Feng Qiu, Yingfei Lv, Yingfei Lv, Huiyong Deng, Huiyong Deng, Yan Sun, Yan Sun, Ning Dai, Ning Dai, } "Single crystalline InAsxSb1-x grown on (100) InSb substrate by liquid phase epitaxy", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84191E (15 October 2012); doi: 10.1117/12.975813; https://doi.org/10.1117/12.975813
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