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15 October 2012 Surface treatment effects on the I-V characteristics of HgCdTe LW infrared photovoltaic detectors
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The weakness of HgCdTe materials is a weak Hg–Te bond, which results in bulk, surface and interface instabilities. Usual surface preparation methods for bulk HgCdTe wafers are chemical etch with bromine-in-methanol (Br-MeOH). Because the bromine etch forms Te-enrich HgCdTe surface due to the depletion of Hg and Cd. This Te-enrich surface layer is easily oxidized when exposed to air or acids, and this native oxide is one of the main reasons degrading the passivation properties. Besides the surface of the material will have more damages during the ion implantation, which is used to process a junction. In this way, appropriate surface passivation is required and is very important for HgCdTe photovoltaic detectors. This paper presents the different surface treatment methods on the I-V characteristics of HgCdTe infrared photovoltaic detectors. The results of the experiments show that the performance of the diodes with surface treatment by the bromine-in-ethanol etching and lactic acid in glycol solution oxidation is better than other diodes, which have no surface treatment or only bromine-in-ethanol etching. So it proves that the process of surface treatment in appropriate methods can improve the quality of surface passivation.
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Xiaohui Xie, Qingjun Liao, Jianmei Zhu, Gaoyin He, Jianxin Wang, Min He, and Xiaoning Hu "Surface treatment effects on the I-V characteristics of HgCdTe LW infrared photovoltaic detectors", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84191G (15 October 2012);

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