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15 October 2012 Design and analysis of InGaAs PIN photodetectors integrated on silicon-on-insulator racetrack resonators
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Abstract
The integration of optical functionalities on a chip has been a long standing goal in the optical community. The ability to integrate compound semiconductors onto foreign substrates can lead to superior or novel functionalities. In this paper we integrate InGaAs /InP photodetectors onto Silicon-on-Insulator (SOI) racetrack resonators. The racetrack resonators can be fabricated by utilizing electron beam lithography and inductively-coupled-plasma reactive ion etching (ICP-RIE) technique. The racetrack structure is used for wavelength selectivity and the straight waveguide sections are used to achieve a large value of the coupling coefficient with a bus waveguide. The transmission characteristic of the racetrack resonator with a multimode interference (MMI) coupler has been numerically simulated. The result shows that the free spectral range (FSR) is inversely proportional to the length of the racetrack resonator. The FSR decreases as the increase of the length of straight waveguide sections or the radius of rings. The generalized multimode transmission matrix of the MMI has been evaluated with beam-propagation method. It has been found that the resonance wavelength can be reasonably predicted. Finally, the equation of quantum efficiency of the device is derived. The calculated peak quantum efficiency of the designed photodetector can achieve about 90% at 1.5499 μ m.
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Fuquan Hu, Yongqing Huang, Xiaofeng Duan, Xinye Fan, Xiaomin Ren, Qi Wang, Xia Zhang, Xin Guo, and Shiwei Cai "Design and analysis of InGaAs PIN photodetectors integrated on silicon-on-insulator racetrack resonators", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84191T (15 October 2012); https://doi.org/10.1117/12.971430
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