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15 October 2012 Novel quantum real-space transfer in semiconductor heterostructures
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Abstract
Real-space transfer (RST) has many excellent characteristics, such as high speed, high frequency and negative differential resistance (NDR). RST has drawn a lot of attention since it was proposed by Z.S.Gribnikov in 1972. However, most of the researches about RST were restricted to the classical regime with the hot electron theory. Quantum real-space transfer (QRST) which relies solely on the wave nature of electrons has not been given sufficient attention. In this work, the quantum real-space transfer was deeply investigated. Al0.48In0.52As/GaAs0.51Sb0.49/Al0.48In0.52As alternative symmetry quantum-well structures was designed, and each thickness of the layer is 10 nm, 12 nm, 10nm. We carried out theoretical calculations on the wave-function module and the electrons confinement probability as the function of the in-plane wave-vector. According to our calculations,a sharp electron transfer occurs in the wave-vector range of 3.42×106-7.6×106 /cm. Therefore, it’s feasible to achieve a quantum real-space transfer. We also compared the results to that of the previous quantum structures. At last we propose the optimization to realize quantum real-space transfer (QRST) and discuss the potential applications of the quantum real-space transfer.
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Chuan Jin, Zhenqiang Chen, and Jianxin Chen "Novel quantum real-space transfer in semiconductor heterostructures", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84191Y (15 October 2012); https://doi.org/10.1117/12.978169
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