15 October 2012 Crystal growth and its large-capacity storage properties for Sc:Ce:Cu:LiNbO3
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Abstract
A series of Sc:Ce:Cu: LiNbO3 crystals with various level of Sc doping were prepared using the Cz equipment with a resistance furnace. The crystal storage properties with optical damage resistance ability, sensitivity and dynamic range were measured by means of two-beam coupling light path. The defect structure is also discussed, accounting for the optical damage resistance. Based on optimal one of these crystals as storage medium, one thousand of holograms were recorded in a public coherent volume of 0.082 cm3. The result shows that storage density arrives10 Gbits/cm3 and the crystal has potential application in the future high density storage.
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Tao Zhang, Tao Zhang, Zhaocheng Fan, Zhaocheng Fan, Guanyu Liu, Guanyu Liu, Xin Li, Xin Li, Tao Geng, Tao Geng, Qiang Dai, Qiang Dai, Chengguo Tong, Chengguo Tong, } "Crystal growth and its large-capacity storage properties for Sc:Ce:Cu:LiNbO3", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 841926 (15 October 2012); doi: 10.1117/12.978834; https://doi.org/10.1117/12.978834
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