15 October 2012 N2 atmosphere annealing effect on HgCdTe electrical damage induced by ICP etching process
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N2 atmosphere annealing process to recover ICP etching induced damage on p type mercury vacancy HgCdTe film has been exploited in this paper. ICP etching and N2 atmosphere annealing processes were carried out on a series of Hgvacancy-doping p-type HgCdTe samples. The carrier transport and lifetime properties of these samples were characterized by Hall measurement and microwave reflectance method respectively. P-to-n electrical damage of the surface HgCdTe film induced by the ICP etching process was deduced from the polarity inversion of Hall coefficient. The carrier transport and lifetime properties were similar to those of the non-etched samples, indicating that the surface HgCdTe electrical damage was recovered partially by annealing at 210°C for 2 hours. I-V and R-V characteristics curves of photodiodes fabricated on the etched and N2 atmosphere annealing processed MCT samples were also comparable to those of photodiodes on the non-etched MCT samples in the following experiments. These results show that N2 atmosphere annealing process is a readily available and promising recovering technique for HgCdTe ICP etching induced damage.
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Jian Huang, Jian Huang, Zhenhua Ye, Zhenhua Ye, Wenting Yin, Wenting Yin, Hanjie Hu, Hanjie Hu, Chun Lin, Chun Lin, Xiaoning Hu, Xiaoning Hu, Ruijun Ding, Ruijun Ding, Li He, Li He, "N2 atmosphere annealing effect on HgCdTe electrical damage induced by ICP etching process", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84192I (15 October 2012); doi: 10.1117/12.977400; https://doi.org/10.1117/12.977400


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