15 October 2012 Temperature stability of thin-film filtering microstructure on InP substrates
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For realizing miniature and integration of the near infrared (NIR) detector and satisfying the requirement of the miniature and integration of the photoelectric detection system, the filter films centered on 1.38 μm were fabricated by using thermal evaporation and alternating Si/SiO2 layers upon InP substrates. The filter film contains a three-cavity fabry-perot structure, the peak of transmission is about 60%, and its full width at half-maximum ranges from 20 to 50 nm. To investigate the temperature stability of the filters, several samples were annealed at different temperature above 250 ℃. The surface morphology of the filter films before and after annealing was characterized by polarized light microscope, and temperature stability of the center wavelengths is examined in the 1380-nm wavelength region by Fourier Transform Infrared Spectroscopy (FTIR). It indicates that there are several points of film falling off because of micro-defect. After annealing, the peak value of the transmission decreases, and the center wavelengths have a blue shift ranging from 20 to 40 nm and the bandwith has an increase of around 8 nm.
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Yunji Wang, Yunji Wang, Hengjing Tang, Hengjing Tang, Xue Li, Xue Li, Weibo Duan, Weibo Duan, Dingquan Liu, Dingquan Liu, Haimei Gong, Haimei Gong, } "Temperature stability of thin-film filtering microstructure on InP substrates", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84192K (15 October 2012); doi: 10.1117/12.976290; https://doi.org/10.1117/12.976290

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