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15 October 2012 The study of selective heating of indium bump in MCT infrared focal plane array
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Abstract
Generally the electrical interconnectivity between The Mercury Cadmium Telluride (MCT) infrared focal plane array (IRFPA) device and circuit takes the flip chip technology using indium bump as a connection medium. In order to improve the reliability of the interconnectivity indium melting is a common packaging technique at present. This technique is called reflow soldering. The heating is transferred to the indium bump by heating the device and circuit. This heating process will persist about 10 minutes resulting in the MCT material going through a 10 minutes high temperature baking course. This baking process will strongly degenerate the characteristic of the MCT device. Under this circumstance this article gives a new heating technique for indium bump which is call induction heating melting technique. This method realizes the selective heating. While the indium bump is melted by the conduction heating the semiconductor material such as MCT can’t be heated.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Haiyan Zhang, Lan Cao, Fulong Zhuang, Xiaoning Hu, and Haimei Gong "The study of selective heating of indium bump in MCT infrared focal plane array", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84192L (15 October 2012); https://doi.org/10.1117/12.976828
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