15 October 2012 High energy picosecond laser for applications in microstructuring of crystalline silicon
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Abstract
Black silicon is very promising for the third generation Solar Cells, because of its fascinating light absorption of above 98% in visible spectrum and more than 90% in 800-2500 nm, and its surface micro-nano structures enlarge light trapping intermediate impurities levels caused by supersaturated doping expand absorptive limitation of crystalline Si. In recent years femtosecond laser pulses were widely used in the process of improving the absorptance by irradiating silicon surfaces with in the presence of different gases. Nevertheless, picosecond laser used to fabricate large-area black silicon is seldom reported. A diode-pumped picosecond Nd:YAG regenerative amplifier laser system designed for microstructuring the crystalline silicon was reported in this paper. At the repetition of 1 kHz, the system generated 1 W average-power, 26-ps-long pulses with a pulse energy of 1 mJ at 1064 nm, which corresponds the peak power of 38.5 MW. A 0.5 W second-harmonic 532 nm laser is achieved with a 20 mm long noncritically phase-matched lithium triborate (LBO) crystal from the 1W 1064 nm laser. igh optical absorption black Si irradiated with 1064 nm and 532 nm picosecond pulses in SF6 at different laser fluence. And the relationship between the surface morphology and the wavelength or the laser fluence was researched.
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Xuechun Lin, Haijuan Yu, Yongguang Huang, Ling Zhang, Hongliang Zhu, "High energy picosecond laser for applications in microstructuring of crystalline silicon", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84193F (15 October 2012); doi: 10.1117/12.978239; https://doi.org/10.1117/12.978239
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