This paper outlines the experimental methods and results obtained from the testing of asymmetric gold surface plasmon
waveguide detectors on an epitaxial silicon structure at optical wavelengths of 1550 nm and 1310 nm. Using end-fire
coupling, responsivities of up to 0.88 mA/W at a 100 mV reverse bias were measured. The photo-detection mechanism
is based on the internal photoelectric effect. The simple and compact design allow for these devices to be integrated and
densely populated with Si-based optoelectronics. The ability to detect wavelengths below the bandgap of Si is also
appealing. 2D responsivity maps are generated using piezoelectric positioners controlled using Labview.