1 May 2012 Surface plasmon detectors on silicon
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This paper outlines the experimental methods and results obtained from the testing of asymmetric gold surface plasmon waveguide detectors on an epitaxial silicon structure at optical wavelengths of 1550 nm and 1310 nm. Using end-fire coupling, responsivities of up to 0.88 mA/W at a 100 mV reverse bias were measured. The photo-detection mechanism is based on the internal photoelectric effect. The simple and compact design allow for these devices to be integrated and densely populated with Si-based optoelectronics. The ability to detect wavelengths below the bandgap of Si is also appealing. 2D responsivity maps are generated using piezoelectric positioners controlled using Labview.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anthony Olivieri, Anthony Olivieri, Pierre Berini, Pierre Berini, } "Surface plasmon detectors on silicon", Proc. SPIE 8424, Nanophotonics IV, 84241C (1 May 2012); doi: 10.1117/12.922863; https://doi.org/10.1117/12.922863


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