10 May 2012 Metallic colour filtering arrays manufactured by nanoimprint lithography
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Proceedings Volume 8428, Micro-Optics 2012; 842807 (2012); doi: 10.1117/12.922086
Event: SPIE Photonics Europe, 2012, Brussels, Belgium
Colour filters using two-dimensional sub wavelength double-breasted rectangular hole, with a 250 nm period, were proposed and manufactured. Using low-cost, wafer scale thermal NanoImprint lithography, a thin metallic aluminium silicon alloy layer was patterned into two dimensional structures onto 200 mm wafer size. Process flow proposed in this paper is fully compatible with IC manufacturing line. A fine tuning of the manufactured design was proposed with arm widths ranging from 30 nm up to 60 nm, and arm lengths ranging from 100 nm up to 240 nm, keeping the period constant at 250 nm. Sub 20 nm resolution 200 mm silicon stamp, with aspect ratio larger than 5 were manufactured using electron beam lithography with proximity correction exposure strategy based on shape modification of the initial design. At the end 864 different patterns were manufactured and etched in thin 40 nm thick aluminium layer. The sub 30 nm resolution metallic patterns were then transfer from silicon wafer to transparent glass wafer to perform optical characterizations. Morphological characterizations and optical measurements of transmission spectra revealed that the optical response were very sensitive to the fine shape of the patterns etched in the metallic layer.
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S. Landis, P. Brianceau, N. Chaix, Y. Désières, V. Reboud, M. Argoud, "Metallic colour filtering arrays manufactured by nanoimprint lithography", Proc. SPIE 8428, Micro-Optics 2012, 842807 (10 May 2012); doi: 10.1117/12.922086; https://doi.org/10.1117/12.922086




Semiconducting wafers

Scanning electron microscopy

Nanoimprint lithography

Optical filters

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