Optical modeling of thin film silicon solar cells by combination of the transfer-matrix method and the Raytracer algorithm

Cordula Walder; Jürgen Lacombe; Karsten von Maydell; Carsten Agert

doi:10.1117/12.921794

4 May 2012 Optical modeling of thin film silicon solar cells by combination of the transfer-matrix method and the Raytracer algorithm

Cordula Walder, Jürgen Lacombe, Karsten von Maydell, Carsten Agert

Author Affiliations +

Proceedings Volume 8429, Optical Modelling and Design II; 84290K (2012) https://doi.org/10.1117/12.921794
Event: SPIE Photonics Europe, 2012, Brussels, Belgium

Abstract

This article deals with an optical model which describes silicon thin film solar cells with rough interfaces in a fast and easy way. In order to simulate thin layer stacks with rough interfaces diffuse scattering as well as interference effects have to be taken into account. Algorithms like the Finite-Difference Time-Domain method (FDTD) solve the Maxwell Equations and therefore fulfil these demands. Yet they take up a considerable amount of simulation time and computation capacity. To overcome these drawbacks an optical model was developed which combines the Transfer- Matrix-Method (TMM) and the Raytracer algorithm. The fraction of TMM and Raytracer in the model is determined by a separating function which can be interpreted as the integral haze. In order to verify the combined optical model a series of amorphous silicon single cells with varying intrinsic layer thicknesses was produced on two different kinds of textured substrates. The results of the combined optical model are compared to measured data as well as to the simulation results of the FDTD method. It can be shown that the combined optical model yields good results at low simulation time.

Citation Download Citation

Cordula Walder, Jürgen Lacombe, Karsten von Maydell, and Carsten Agert "Optical modeling of thin film silicon solar cells by combination of the transfer-matrix method and the Raytracer algorithm", Proc. SPIE 8429, Optical Modelling and Design II, 84290K (4 May 2012); https://doi.org/10.1117/12.921794

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