10 May 2012 Ring resonator silicon optical modulator based on interleaved PN junctions
Author Affiliations +
We present first experimental results of a high-speed silicon optical modulator based on carrier depletion in interleaved PN junctions oriented in the waveguide direction. The modulator is integrated in a ring resonator of radius 50 μm. The modulator is characterized using a laser beam at 1.55 μm for TE and TM polarizations, and extinction ratios as high as 11 dB and 10 dB in in TE- and TM-polarizations, respectively, obtained between 0 and -10 V. At 10 Gbit/s extinction ratios of 4.1 dB and 2.7 dB for TE- and TM-polarization, respectively, are experimentally demonstrated.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Melissa Ziebell, Melissa Ziebell, Delphine Marris-Morini, Delphine Marris-Morini, Gilles Rasigade, Gilles Rasigade, Jean-Marc Fédéli, Jean-Marc Fédéli, Eric Cassan, Eric Cassan, Laurent Vivien, Laurent Vivien, } "Ring resonator silicon optical modulator based on interleaved PN junctions", Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 84310J (10 May 2012); doi: 10.1117/12.922936; https://doi.org/10.1117/12.922936


Design of based silicon waveguide reflective modulators
Proceedings of SPIE (September 30 2003)
Small devices in SOI: fabrication and design issues
Proceedings of SPIE (July 01 2004)
40 Gb s high speed silicon modulator for TE and...
Proceedings of SPIE (January 17 2011)

Back to Top