10 May 2012 Ring resonator silicon optical modulator based on interleaved PN junctions
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Abstract
We present first experimental results of a high-speed silicon optical modulator based on carrier depletion in interleaved PN junctions oriented in the waveguide direction. The modulator is integrated in a ring resonator of radius 50 μm. The modulator is characterized using a laser beam at 1.55 μm for TE and TM polarizations, and extinction ratios as high as 11 dB and 10 dB in in TE- and TM-polarizations, respectively, obtained between 0 and -10 V. At 10 Gbit/s extinction ratios of 4.1 dB and 2.7 dB for TE- and TM-polarization, respectively, are experimentally demonstrated.
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Melissa Ziebell, Melissa Ziebell, Delphine Marris-Morini, Delphine Marris-Morini, Gilles Rasigade, Gilles Rasigade, Jean-Marc Fédéli, Jean-Marc Fédéli, Eric Cassan, Eric Cassan, Laurent Vivien, Laurent Vivien, } "Ring resonator silicon optical modulator based on interleaved PN junctions", Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 84310J (10 May 2012); doi: 10.1117/12.922936; https://doi.org/10.1117/12.922936
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