10 May 2012 Ring resonator silicon optical modulator based on interleaved PN junctions
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Abstract
We present first experimental results of a high-speed silicon optical modulator based on carrier depletion in interleaved PN junctions oriented in the waveguide direction. The modulator is integrated in a ring resonator of radius 50 μm. The modulator is characterized using a laser beam at 1.55 μm for TE and TM polarizations, and extinction ratios as high as 11 dB and 10 dB in in TE- and TM-polarizations, respectively, obtained between 0 and -10 V. At 10 Gbit/s extinction ratios of 4.1 dB and 2.7 dB for TE- and TM-polarization, respectively, are experimentally demonstrated.
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Melissa Ziebell, Melissa Ziebell, Delphine Marris-Morini, Delphine Marris-Morini, Gilles Rasigade, Gilles Rasigade, Jean-Marc Fédéli, Jean-Marc Fédéli, Eric Cassan, Eric Cassan, Laurent Vivien, Laurent Vivien, "Ring resonator silicon optical modulator based on interleaved PN junctions", Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 84310J (10 May 2012); doi: 10.1117/12.922936; https://doi.org/10.1117/12.922936
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