11 May 2012 Opto-electrical characterization of erbium-doped slot waveguides
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Abstract
The convergence of photonics and microelectronics within a single chip is still lacking of a monolithical on-chip optical amplifier. Rare-earth doped slot waveguides show a large potential as on-chip source. Slot waveguides with silicon nanocrystals embedded in a dielectric host matrix can increase the light confinement in the active layer and allow electrical injection. In this work, horizontal slot waveguides formed by two thick silicon layers separated by a thin erbium doped silicon rich silicon oxide layer are studied as on-chip optical amplifiers. The waveguides are grown in a CMOS line with the active material grown by low-pressure chemical vapor deposition. Optical tests are performed and light propagation in the slot waveguides is observed. Using the cut-back technique, spectra propagation losses are evaluated. Room temperature electroluminescence is observed at 1.54 μm. Transmitted optical signal resonant with Er absorption is studied as a function of the injected current for different probing laser wavelengths.
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Andrea Tengattini, Andrea Tengattini, Davide Gandolfi, Davide Gandolfi, Alessandro Marconi, Alessandro Marconi, Oleksiy Anopchenko, Oleksiy Anopchenko, Nikola Prtljaga, Nikola Prtljaga, Joan Manel Ramirez, Joan Manel Ramirez, Federico Ferrarese Lupi, Federico Ferrarese Lupi, Yonder Berencen, Yonder Berencen, Daniel Navarro Urrios, Daniel Navarro Urrios, Blas Garrido, Blas Garrido, Jean-Marc Fedeli, Jean-Marc Fedeli, Pierrette Rivallin, Pierrette Rivallin, Kavita Surana, Kavita Surana, Lorenzo Pavesi, Lorenzo Pavesi, } "Opto-electrical characterization of erbium-doped slot waveguides", Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 843118 (11 May 2012); doi: 10.1117/12.922695; https://doi.org/10.1117/12.922695
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