Paper
11 May 2012 Room temperature direct-gap electroluminescence in Ge/SiGe quantum well waveguides
Papichaya Chaisakul, Delphine Marris-Morini, Giovanni Isella, Daniel Chrastina, Jacopo Frigerio, Mohamed-Saïd Rouifed, Nicolas Izard, Xavier Le Roux, Samson Edmond, Jean-René Coudevylle, Laurent Vivien
Author Affiliations +
Abstract
Room temperature direct gap electroluminescence (EL) from a Ge/Si0.15Ge0.85 MQW waveguide was experimentally studied. The dependence of the EL intensity on the injection current and temperature was measured. The direct gap EL from Ge/SiGe MQWs was shown to be transverse-electric (TE) polarized, confirming that the EL originates from recombination with a HH state.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Papichaya Chaisakul, Delphine Marris-Morini, Giovanni Isella, Daniel Chrastina, Jacopo Frigerio, Mohamed-Saïd Rouifed, Nicolas Izard, Xavier Le Roux, Samson Edmond, Jean-René Coudevylle, and Laurent Vivien "Room temperature direct-gap electroluminescence in Ge/SiGe quantum well waveguides", Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 843119 (11 May 2012); https://doi.org/10.1117/12.922008
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KEYWORDS
Electroluminescence

Quantum wells

Waveguides

Germanium

Temperature metrology

Polarization

Diodes

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